Try CrestTec’s plasma resistant FFKM for minimal particle generation and extremely low metallic ion content!

Try CrestTec’s plasma resistant FFKM for minimal particle generation and extremely low metallic ion content!

Plasmas involved in both deposition, etch and cleaning processes utilize aggressive chemistries that put even high-functioning perfluorinated sealing compounds to the test. Much room for improvement has been left in this industry with many seal materials still posing significant threats to defectivity or downtime despite being designed for low particle generation or etch resistance.

CrestTec’s extreme plasma resistance FFKM has proven success in CVD and etch applications, putting this material at the top of its class.  Typically, seal materials for semiconductor applications are optimized for low particulation or extreme etch resistance, however, our extreme plasma resistant FFKM provides both attributes in one material.  Recent fab testing shows our FFKM has lower erosion in aggressive plasma applications even when compared to today’s leading elastomeric materials.

The Challenge

A customer at a major US Fab was having major issues on their 200mm tool set with He/O2/SiH4 based processes. In this aggressive chemical environment, the customer was experiencing severe particle buildup and vacuum leaks, occurring around roughly 34,000 wafers.

The incumbent O-ring was deemed the likely culprit for these issues. Upon inspection the current O-ring showed severe material degradation due to aggressive plasma etching, with at least 1/5thof the seal eroded!

The current seal was not only polluting the process with particles, but it was contributing to lost revenue through early product scrap and decreased PM intervals.

The customer reached out to CrestTec to engineer a solution

Test Details

Location: Major 200mm US Fab

Tool: Widely used 200mm tool set with NF3 plasma clean application

CrestTec’s Solution

CrestTec’s FFKM compound was able to achieve more than three times the benchmark 20,000 wafer count with no visible etchingfull elasticitymaintained, and minimal surface discoloration. When compared to the previous seal, the competition’s compound experienced severe material degradation with at least 1/5th of the seal completely eroded!

In this case the switch to CrestTec’s extreme plasma resistant FFKM presents the Fab the opportunity to reduce seal spend(greater plasma resistance equates to longer seal life), increase equipment uptimeand decrease potential for seal to contribute to particle generation.

CrestTec’s extreme plasma resistance FFKM has proven success in CVD and etch applications, putting this material at the top of its class.  Typically, seal materials for semiconductor applications are optimized for low particulation or extreme etch resistance, however, our extreme plasma resistant FFKM provides both attributes in one material.  Recent fab testing shows our FFKM has lower erosion in aggressive plasma applications even when compared to today’s leading elastomeric materials.